Effect of temperature on Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor field-effect transistors

Ga2O3(Gd2O3) was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal-oxide-semiconductor field-effect transistor (MOSFET). Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal-semiconductor field-effect transistor fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 degrees C. Modeling of the effect of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device. (C) 1998 American Institute of Physics. [S0003-6951(98)02752-1].