3D simulation of triple-gate MOSFETs with different mobility regions

被引：7

作者：

Conde, J. ^{[1
]}

Cerdeira, A. ^{[1
]}

Pavanello, M. ^{[2
]}

Kilchytska, V. ^{[3
]}

Flandre, D. ^{[3
]}

机构：

[1] CINVESTAV, Dept Elect Engn, Mexico City 07300, DF, Mexico

[2] Ctr Univ FEI, Dept Elect Engn, BR-09850901 Selo Bernardo Do Campo, Brazil

[3] Catholic Univ Louvain, ICTEAM Inst, Microelect Lab, B-1348 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

3D simulation; FinFET simulation; FinFET modeling; Double-gate modeling; MODEL;

D O I：

10.1016/j.mee.2011.03.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a new approach for analyzing 3D structure triple-gate MOSFETs using three different regions, one at the top and two in the sidewalls of the fin, which allows for considering different carrier mobilities in each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Robustness of the proposed structure is validated by experimental data obtained on FinFETs. A very good agreement is obtained between experimental and simulated characteristics. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1633 / 1636

页数：4

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