Spontaneous recombination lifetime in compressively strained InGaAs and InGaP quantum well lasers grown on GaAs substrates

被引：0

作者：

Susaki, W ^{[1
]}

Ohhashi, T ^{[1
]}

Yuri, S ^{[1
]}

机构：

[1] Osaka Electrocommun Univ, Neyagawa, Osaka 5728530, Japan

来源：

COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS | 2005年 / 184卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The spontaneous carrier recombination lifetime in compressively strained InGaAs and InGaP quantum well lasers grown on GaAs substrates increases with the compressive strain or In content. It will be explained that introduction of the compressive strain substantially eliminate the electron transition probability between the higher energy subbandls, which are not responsible to the lasing.

引用

页码：95 / 98

页数：4