Spectroscopic properties of red Bi4Ge3O12 by vertical Bridgman method

被引：14

作者：

Yu, Pingsheng ^{[1
,2
]}

Su, Liangbi ^{[1
]}

Zhao, Hengyu ^{[1
,2
]}

Guo, Xin ^{[1
]}

Li, Hongjun ^{[1
]}

Feng, Xiqi ^{[1
]}

Yang, Qiuhong ^{[2
]}

Xu, Jun ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Transparent & Optofunct Inorgan Mat, Shanghai 200050, Peoples R China

[2] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

来源：

OPTICAL MATERIALS | 2011年 / 33卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Red Bi4Ge3O12; Spectroscopic properties; DOPED BI4GE3O12; SINGLE-CRYSTAL; BGO; GROWTH; IONS; SCINTILLATORS; BI4SI3O12; PURE;

D O I：

10.1016/j.optmat.2011.01.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Red Bi4Ge3O12 (BGO) single crystals had been grown by vertical Bridgman (VB) method. The structure of this crystal was determined by XRD. The absorption and emission spectra of the red BGO in visible and near infrared region (NIR) were measured at room temperature. The emission intensity of the red BGO is weaker than that of ordinary BGO at about 500 nm. Interestingly, the red BGO shows a significant emission band centered at about 1495 nm. The red BGO faded and its properties recovered after ultraviolet (UV) irradiation or annealing. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：831 / 834

页数：4

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