Study on synthesis and electrical properties of slab shape diamond crystals in FeNiMnCo-C-P system under HPHT

被引：24

作者：

Gong, Chunsheng ^{[1
]}

Li, Shangsheng ^{[1
]}

Zhang, Haoran ^{[1
]}

Su, Taichao ^{[1
]}

Hu, Meihua ^{[1
]}

Ma, Hongan ^{[2
]}

Jia, Xiaopeng ^{[2
]}

Li, Yong ^{[3
]}

机构：

[1] Henan Polytech Univ, Sch Mat Sci & Engn, Jiaozuo 454000, Henan, Peoples R China

[2] Jilin Univ, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China

[3] Tongren Univ, Sch Data Sci, Tongren 554300, Guizhou, Peoples R China

来源：

INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS | 2017年 / 66卷

基金：

美国国家科学基金会; 中国博士后科学基金;

关键词：

Slab shape; Phosphorus doping; HPHT; n-Type semiconductors; HIGH-TEMPERATURE; HIGH-PRESSURE; GROWTH; PHOSPHORUS; IMPURITY;

D O I：

10.1016/j.ijrmhm.2017.03.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reported the synthesis of slab shape diamond crystals with phosphorus doping from FeNiMnCo-C system in cubic anvil high pressure apparatus (SPD-6 x 1200) at 5.6 GPa and 1250-1320 degrees C. It was attributed to the presence of additive phosphorus that the temperature region of synthetic sheet cubic diamond increases evidently. With the increase of phosphorus content, the surfaces of the slab shape diamond crystals became rough. The results of Raman spectroscopy indicated that the diamonds doped by more phosphorous have more crystal defects and impurities. Furthermore, the electrical properties of the large diamond crystals were tested by a four point probe and the Hall Effect method. It was shown that the large single crystal samples were n-type semiconductors. This work enriches the application of the slab large diamond crystals. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：116 / 121

页数：6

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