UTBB FDSOI scaling enablers for the 10nm node

被引：0

作者：

Grenouillet, L. ^{[1
]}

Liu, Q. ^{[2
]}

Wacquez, R. ^{[1
]}

Morin, P. ^{[2
]}

Loubet, N. ^{[2
]}

Cooper, D. ^{[1
]}

Pofelski, A. ^{[2
]}

Weng, W. ^{[3
]}

Bauman, F. ^{[3
]}

Gribelyuk, M. ^{[3
]}

Wang, Y. ^{[3
]}

De Salvo, B. ^{[1
]}

Gimbert, J. ^{[2
]}

Cheng, K. ^{[3
]}

Le Tiec, Y. ^{[1
]}

Chanemougame, D. ^{[2
]}

Augendre, E. ^{[1
]}

Maitrejean, S. ^{[1
]}

Khakifirooz, A. ^{[3
]}

Kuss, J. ^{[3
]}

Schulz, R. ^{[3
]}

Janicki, C. ^{[3
]}

Lherron, B. ^{[2
]}

Guillaumet, S. ^{[2
]}

Rozeau, O. ^{[1
]}

Chafik, F. ^{[2
]}

Bataillon, J. L. ^{[2
]}

Wu, T. ^{[3
]}

Kleemeier, W. ^{[2
]}

Celik, M. ^{[2
]}

Faynot, O. ^{[1
]}

Sampson, R. ^{[2
]}

Doris, B. ^{[3
]}

Vinet, M. ^{[1
]}

机构：

[1] CEA LETI, Albany, NY 12203 USA

[2] STMicroelectronics, Albany, NY 12203 USA

[3] IBM Corp, Albany, NY 12203 USA

来源：

2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

UTBB FDSOI technology is a faster, cooler and simpler technology addressing the performance/energy consumption trade-off. In this paper we present the main front-end-of-the-line knobs to scale down this promising technology to the 10nm node.

引用

页数：2

共 50 条

[41] Characteristics of 22 nm UTBB-FDSOI technology with an ultra-wide temperature range [J].

Wang, Hanbin ;

Bi, Jinshun ;

Bu, Jianhui ;

Liu, Hainan ;

Zhao, Fazhan ;

Cao, Huajun ;

Ai, Chao .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (10)

[42] Scanner focus metrology and control system by pure focus for advanced 10nm logic node [J].

Oh, Jonghun ;

Maeng, Kwang-Seok ;

Shin, Jae-Hyung ;

Choi, Won-Woong ;

Won, Sung-Keun ;

Grouwstra, Cedric ;

El Kodadi, Mohamed ;

Heil, Stephan ;

van der Meijden, Vidar ;

Hong, Jong Kyun ;

Kim, Sang-Jin ;

Kwon, Oh-Sung .

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXII, 2018, 10585

[43] Performance vs. reliability adaptive body bias scheme in 28 nm 8214 nm UTBB FDSOI nodes [J].

Ndiaye, C. ;

Huard, V. ;

Federspiel, X. ;

Cacho, F. ;

Bravaix, A. .

MICROELECTRONICS RELIABILITY, 2016, 64 :158-162

[44] Progress toward 10nm CMOS devices [J].

Timp, G ;

Bourdelle, KK ;

Bower, JE ;

Baumann, FH ;

Boone, T ;

Cirelli, R ;

Evans-Lutterodt, K ;

Garno, J ;

Ghetti, A ;

Gossmann, H ;

Green, M ;

Jacobson, D ;

Kim, Y ;

Kleiman, R ;

Klemens, F ;

Kornblit, A ;

Lochstampfor, C ;

Mansfield, W ;

Moccio, S ;

Muller, DA ;

Ocola, LE ;

O'Malley, ML ;

Rosamilia, J ;

Sapjeta, J ;

Silverman, P ;

Sorsch, T ;

Tennant, DM ;

Timp, W ;

Weir, BE .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :615-618

[45] Exploratory Study of Resistive Random Access Memory (R-RAM) Scaling beyond 10nm [J].

Ho, ChiaHua ;

Yang, Fu-Liang .

2012 12TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, 2012, :22-24

[46] Low-Leakage SRAM Wordline Drivers for the 28-nm UTBB FDSOI Technology [J].

Corsonello, Pasquale ;

Frustaci, Fabio ;

Perri, Stefania .

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2015, 23 (12) :3133-3137

[47] Breakdown Analysis of Magnetic Flip-Flop With 28-nm UTBB FDSOI Technology [J].

Cai, Hao ;

Wang, You ;

Naviner, Lirida Alves de Barros ;

Zhao, Weisheng .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (03) :376-383

[48] Strain Transfer Structure as a Mobility Booster for Fully-Depleted SOI MOSFETs at the 10nm Node [J].

Morvan, S. ;

Andrieu, F. ;

Barbe, J-C ;

Ghibaudo, G. .

2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, :57-60

[49] Characterization of the High Frequency Performance of 28-nm UTBB FDSOI MOSFETs as a Function of Backgate Bias [J].

Shopov, Stefan ;

Voinigescu, Sorin P. .

2014 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2014,

[50] Characterization and modelling of layout effects in SiGe channel pMOSFETs from 14 nm UTBB FDSOI technology [J].

Berthelon, R. ;

Andrieu, F. ;

Ortolland, S. ;

Nicolas, R. ;

Poiroux, T. ;

Baylac, E. ;

Dutartre, D. ;

Josse, E. ;

Claverie, A. ;

Haond, M. .

SOLID-STATE ELECTRONICS, 2017, 128 :72-79

← 1 2 3 4 5 →