UTBB FDSOI scaling enablers for the 10nm node

被引：0

作者：

Grenouillet, L. ^{[1
]}

Liu, Q. ^{[2
]}

Wacquez, R. ^{[1
]}

Morin, P. ^{[2
]}

Loubet, N. ^{[2
]}

Cooper, D. ^{[1
]}

Pofelski, A. ^{[2
]}

Weng, W. ^{[3
]}

Bauman, F. ^{[3
]}

Gribelyuk, M. ^{[3
]}

Wang, Y. ^{[3
]}

De Salvo, B. ^{[1
]}

Gimbert, J. ^{[2
]}

Cheng, K. ^{[3
]}

Le Tiec, Y. ^{[1
]}

Chanemougame, D. ^{[2
]}

Augendre, E. ^{[1
]}

Maitrejean, S. ^{[1
]}

Khakifirooz, A. ^{[3
]}

Kuss, J. ^{[3
]}

Schulz, R. ^{[3
]}

Janicki, C. ^{[3
]}

Lherron, B. ^{[2
]}

Guillaumet, S. ^{[2
]}

Rozeau, O. ^{[1
]}

Chafik, F. ^{[2
]}

Bataillon, J. L. ^{[2
]}

Wu, T. ^{[3
]}

Kleemeier, W. ^{[2
]}

Celik, M. ^{[2
]}

Faynot, O. ^{[1
]}

Sampson, R. ^{[2
]}

Doris, B. ^{[3
]}

Vinet, M. ^{[1
]}

机构：

[1] CEA LETI, Albany, NY 12203 USA

[2] STMicroelectronics, Albany, NY 12203 USA

[3] IBM Corp, Albany, NY 12203 USA

来源：

2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

UTBB FDSOI technology is a faster, cooler and simpler technology addressing the performance/energy consumption trade-off. In this paper we present the main front-end-of-the-line knobs to scale down this promising technology to the 10nm node.

引用

页数：2

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