Review of Silicon Carbide Power Devices and Their Applications

被引：1139

作者：

She, Xu ^{[1
]}

Huang, Alex Q. ^{[2
]}

Lucia, Oscar ^{[3
]}

Ozpineci, Burak ^{[4
,5
]}

机构：

[1] GE Global Res, Elect Power, Niskayuna, NY 12309 USA

[2] North Carolina State Univ, Raleigh, NC 27696 USA

[3] Univ Zaragoza, Elect Engn & Commun, Zaragoza 50018, Spain

[4] Oak Ridge Natl Lab, Knoxville, TN 37932 USA

[5] Univ Tennessee, Knoxville, TN 37996 USA

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2017年 / 64卷 / 10期

关键词：

Power converter; Power device; review; silicon carbide (SiC); OF-THE-ART; EDGE TERMINATION; PIN DIODES; DESIGN; KV; TECHNOLOGY; SINGLE; FUTURE; CONVERTER; AREA;

D O I：

10.1109/TIE.2017.2652401

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Silicon carbide (SiC) power devices have been investigated extensively in the past two decades, and there are many devices commercially available now. Owing to the intrinsic material advantages of SiC over silicon (Si), SiC power devices can operate at higher voltage, higher switching frequency, and higher temperature. This paper reviews the technology progress of SiC power devices and their emerging applications. The design challenges and future trends are summarized at the end of the paper.

引用

页码：8193 / 8205

页数：13

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