Crack mechanism in wire bonding joints

被引：70

作者：

Ramminger, S

Turkes, P

Wachutka, G

机构：

[1] Siemens AG, Corp Technol Dept, D-8000 Munich, Germany

[2] Tech Univ Munich, Inst Phys Electrotechnol, D-8000 Munich, Germany

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 6-8期

关键词：

D O I：

10.1016/S0026-2714(98)00141-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High voltage and high current power modules are key components for traction applications. While the modules are exposed to harsh stress conditions all over their lifetime, high reliability is of decisive importance in this field of application. In power electronic packages wire bonding is used for the electrical interconnection from the chips to the output pins. Wire bond lift-off and solder fatigue are limiting the reliability. In this work we investigate the initiation and growth of cracks in the wire bands using finite-element analysis. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1301 / 1305

页数：5