Multiple cell upsets as the key contribution to the total SER of 65 nm CMOS SRAMs and its dependence on well engineering

被引：99

作者：

Gasiot, G. ^{[1
]}

Giot, D. ^{[1
]}

Roche, P. ^{[1
]}

机构：

[1] STMicroelect, Cent CAD & Desigh Solut, Front End Technol & Mfg, F-38926 Crolles, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

D O I：

10.1109/TNS.2007.908147

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Neutron and alpha SER test results are presented for two SRAMs processed in a commercial 65 nm CMOS technology. Devices with the commonly used triple well option have higher rates of Multiple Cell Upsets (MCU) and therefore higher SER. The same behavior is reported for older technologies from 180 nm to 65 run. Full 3-D device simulations on 65 nm SRAM cells quantify the amplification of the charge collection with the usage of triple well and frequency of well contacts.

引用

页码：2468 / 2473

页数：6

共 20 条

[1]

[Anonymous], 89 JEDEC JESD

[2] Radiation-induced soft errors in advanced semiconductor technologies [J].

Baumann, RC .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2005, 5 (03) :305-316

[3]

BURNETT D, 1993, INT REL PHY, P156, DOI 10.1109/RELPHY.1993.283330

[4] A statistical technique to measure the proportion of MBU's in SEE testing [J].

Chugg, A. M. ;

Moutrie, M. J. ;

Burnell, A. J. ;

Jones, R. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3139-3144

[5] Alpha-induced multiple cell upsets in standard and radiation hardened SRAMs manufactured in a 65 nm CMOS technology [J].

Gasiot, G. ;

Giot, D. ;

Roche, P. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3479-3486

[6]

GIOT D, 2006, RADECS C

[7]

HAZUCHA P, 2003, P TECH DIG IEEE INT

[8]

Kawakami Y, 2004, IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, P945

[9]

Kishimoto T., 1996, P 11 INT C ION IMPL, P9

[10] Monte-Carlo simulations to quantify neutron-enduced multiple bit upsets in advanced SRAMs [J].

Mérelle, T ;

Saigné, F ;

Sagnes, B ;

Gasiot, G ;

Roche, P ;

Carrière, T ;

Palau, MC ;

Wrobel, E ;

Palau, JM .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (05) :1538-1544

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