Heterogeneous oxidation of Si(111) 7 x 7 monitored with Kelvin probe force microscopy

被引：2

作者：

Sturm, J. M. ^{[1
]}

Wormeester, H. ^{[1
]}

Poelsema, Bene ^{[1
]}

机构：

[1] Univ Twente, Inst Nanotechnol, Solid State Phys MESA, NL-7500 AE Enschede, Netherlands

来源：

SURFACE SCIENCE | 2007年 / 601卷 / 19期

关键词：

silicon; Oxygen; Kelvin probe force microscopy; Atomic force microscopy; Scanning probe techniques; Work function measurements;

D O I：

10.1016/j.susc.2007.07.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Laterally resolved topography and Contact Potential Difference (CPD) images, acquired during the exposure of clean Si(1 1 1) 7 × 7 to molecular oxygen at room temperature, show a heterogeneous oxidation process, without preference for step edges. The increase of and lateral changes in work function variations show that the CPD variations of the final oxide film are related to the silicon/oxide interface. The molecular Höfer precursor has a pronounced influence on the development of the interface bonding. © 2007 Elsevier B.V. All rights reserved.

引用

页码：4598 / 4602

页数：5

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