BCB Bonding Technology of Back-Side Illuminated COMS Device

被引：0
|
作者：
Wu, Y. [1 ]
Jiang, G. Q. [1 ]
Jia, S. X. [1 ]
Shi, Y. M. [2 ]
机构：
[1] China Elect Technol Grp, Nanjing Elect Device Inst, Nanjing, Jiangsu, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai, Peoples R China
来源：
19TH ANNUAL CONFERENCE AND 8TH INTERNATIONAL CONFERENCE OF CHINESE SOCIETY OF MICRO/NANO TECHNOLOGY (CSMNT2017) | 2018年 / 986卷
关键词：
D O I：
10.1088/1742-6596/986/1/012023
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Back-side illuminated CMOS(BSI) sensor is a key device in spaceborne hyperspectral imaging technology. Compared with traditional devices, the path of incident light is simplified and the spectral response is planarized by BSI sensors, which meets the requirements of quantitative hyperspectral imaging applications. Wafer bonding is the basic technology and key process of the fabrication of BSI sensors. 6 inch bonding of CMOS wafer and glass wafer was fabricated based on the low bonding temperature and high stability of BCB. The influence of different thickness of BCB on bonding strength was studied. Wafer bonding with high strength, high stability and no bubbles was fabricated by changing bonding conditions.
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页数：4
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