Modeling of lattice site-dependent incomplete ionization in a-SiC devices

被引：15

作者：

Ayalew, T ^{[1
]}

Grasser, T ^{[1
]}

Kosina, H ^{[1
]}

Selberherr, S ^{[1
]}

机构：

[1] TU Vienna, Inst Microelect, A-1040 Vienna, Austria

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

simulation; SiC; incomplete ionization; activation energy; inequivalent sites;

D O I：

10.4028/www.scientific.net/MSF.483-485.845

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In contrast to narrow bandgap semiconductors such as silicon, common doping elements in SiC have activation energies larger than the thermal energy k(B)T even at room temperature. Inequivalent a-SiC sites, one with cubic (k) surrounding and the other with hexagonal (h) surrounding are expected to cause site-dependent impurity levels. Therefore, an appropriate incomplete ionization model which accounts for lattice site-dependent ionization level of impurities in a-SiC has been developed and implemented in the general-purpose device simulator MINIMOS-NT.

引用

页码：845 / 848

页数：4