High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN by plasma assisted molecular beam epitaxy

被引：62

作者：

Skierbiszewski, C

Dybko, K

Knap, W

Siekacz, M

Krupczynski, W

Nowak, G

Bockowski, M

Lusakowski, J

Wasilewski, ZR

Maude, D

Suski, T

Porowski, S

机构：

[1] PAS, Inst High Pressure Phys, PL-01142 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[3] Univ Montpellier 2, CNRS, GES UMR, F-34950 Montpellier, France

[4] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[5] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON, Canada

[6] MPI CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble, France

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 10期

关键词：

D O I：

10.1063/1.1873056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results on growth and magnetotransport characterization of AlGaN/GaN heterostructures obtained by plasma assisted molecular beam epitaxy on dislocation-free (below 100 cm(-2)) GaN high pressure synthesized bulk substrates are presented. The record mobilities of the two dimensional electron gas, (2DEG) exceeding 100 000 cm(2)/V s at liquid helium temperature and 2500 cm(2)/V s at room temperature are reported. An analysis of the high field conductivity tensor components allowed us to discuss the main electron scattering mechanisms and to confirm unambiguously the 2DEG room temperature mobility values. (c) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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