Radiation-induced structural transformations in vitreous chalcogenide semiconductors

被引：37

作者：

Balitska, VO

Shpotyuk, OI

机构：

[1] Lviv Sci Res Inst Mat, UA-290031 Lviv, Ukraine

[2] Univ Czestochowa, Inst Phys, PL-42201 Czestochowa, Poland

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

vitreous chalcogenide; semiconductors; radiation-induced structural transformation;

D O I：

10.1016/S0022-3093(98)00154-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Radiation-induced structural transformations (RST) in vitreous As2S3-based chalcogenide semiconductors have been considered at the level of destruction-polymerization changes of covalent chemical bonds, associated with coordination defect (CD) formation processes. The whole variety of the CD has been taken into account to construct a physically real variant of the radiation-idduced structural changes. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：723 / 727

页数：5

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