Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications

被引：126

作者：

Bhosle, V. ^{[1
]}

Prater, J. T.

Yang, Fan

Burk, D.

Forrest, S. R.

Narayan, J.

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] USA, Res Off, Div Mat Sci, Res Triangle Pk, NC 27709 USA

[3] Princeton Univ, Princeton Inst Sci & Technol Mat PRISM, Princeton, NJ 08544 USA

[4] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[5] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[6] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2750410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report microstructural characteristics and properties of gallium-doped ZnO films deposited on glass by pulsed laser deposition. The Zn0.95Ga0.05O film deposited at 200 degrees C and 1x10(-3) Torr showed predominant < 0001 > orientation with a metallic behavior and a resistivity of 2x10(-4) Omega cm at room temperature. Low resistivity of the ZnGaO films has been explained in terms of optimal combination of carrier concentration and minimized scattering, and is correlated with the microstructure and the deposition parameters. Power conversion efficiency comparable to indium tin oxide-based devices (1.25 +/- 0.05%) is achieved on a Zn0.95Ga0.05O/Cu-phthalocyanine/C-60 double-heterojunction solar cell. (c) 2007 American Institute of Physics.

引用

页数：5

共 23 条

[1]

[Anonymous], 2001, ASTM D2084, P1

[2]

Baldo M, 1998, ADV MATER, V10, P1505, DOI 10.1002/(SICI)1521-4095(199812)10:18<1505::AID-ADMA1505>3.0.CO

[3]

2-G

[4] Microstructure and electrical property correlations in Ga:ZnO transparent conducting thin films [J].

Bhosle, V. ;

Narayan, J. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (09)

[5] Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO [J].

Bhosle, V ;

Tiwari, A ;

Narayan, J .

APPLIED PHYSICS LETTERS, 2006, 88 (03) :1-3

[6] Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles [J].

Bozano, LD ;

Kean, BW ;

Beinhoff, M ;

Carter, KR ;

Rice, PM ;

Scott, JC .

ADVANCED FUNCTIONAL MATERIALS, 2005, 15 (12) :1933-1939

[7]

Chrisey D. B., 1994, PULSED LASER DEPOSIT

[8]

Fairley N., 2005, CASA COOKBOOK 1

[9] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS [J].

HAMBERG, I ;

GRANQVIST, CG .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :R123-R159

[10] Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices [J].

Kim, H ;

Gilmore, CM ;

Horwitz, JS ;

Piqué, A ;

Murata, H ;

Kushto, GP ;

Schlaf, R ;

Kafafi, ZH ;

Chrisey, DB .

APPLIED PHYSICS LETTERS, 2000, 76 (03) :259-261

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