Low resistance, high dynamic range reconfigurable phase change switch for radio frequency applications

被引：48

作者：

Chua, E. K. ^{[1
,2
]}

Shi, L. P. ^{[1
]}

Zhao, R. ^{[1
]}

Lim, K. G. ^{[1
]}

Chong, T. C. ^{[1
,3
]}

Schlesinger, T. E. ^{[2
]}

Bain, J. A. ^{[2
]}

机构：

[1] Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore

[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[3] Singapore Univ Technol & Design, Singapore 279623, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期

基金：

美国安德鲁·梅隆基金会;

关键词：

GETE FILMS;

D O I：

10.1063/1.3508954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A GeTe reconfigurable phase change switch for radio frequency applications is presented. Low ON state resistance (180 Omega) and large dynamic range (7 x 10(3) X) were achieved through low resistance electrode design and high current. A partial crystallization and partial reamorphization model is proposed to explain the differences between the measured and calculated device ON (set) and OFF (reset) state resistances, respectively. The dependency between ON state resistance and reset current was estimated using a first order thermal design in steady state which suggests lower reset current by choosing materials of lower melting temperature and structures with better thermal isolation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3508954]

引用

页数：3

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