Light-Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

被引：51

作者：

Ling, Haifeng ^{[1
]}

Tan, Kangming ^{[1
]}

Fang, Qiyun ^{[1
]}

Xu, Xinshui ^{[1
]}

Chen, Hao ^{[1
]}

Li, Wenwen ^{[1
]}

Liu, Yefan ^{[2
]}

Wang, Laiyuan ^{[1
]}

Yi, Mingdong ^{[1
]}

Huang, Ru ^{[2
]}

Qian, Yan ^{[1
]}

Xie, Linghai ^{[1
]}

Huang, Wei ^{[1
,3
]}

机构：

[1] Nanjing Univ Posts & Telecommun, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Key Lab Organ Elect & Informat Displays, Inst Adv Mat, 9 Wenyuan Rd, Nanjing 210023, Jiangsu, Peoples R China

[2] Peking Univ, Inst Microelect, 5 Yiheyuan Rd, Beijing 100871, Peoples R China

[3] Nanjing Tech Univ, Jiangsu Natl Synerget Innovat Ctr Adv Mat SICAM, Key Lab Flexible Elect, Inst Adv Mat, 30 South Puzhu Rd, Nanjing 211816, Jiangsu, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2017年 / 3卷 / 08期

基金：

中国国家自然科学基金;

关键词：

charge trapping; filaments; photochromic memory; resistive switching; RESISTIVE SWITCHING MEMORIES; ELECTRICAL BISTABILITY; DIARYLETHENE MOLECULES; ACCEPTOR; STORAGE; DONOR; DEVICE; PERFORMANCE; MECHANISMS; PROGRESS;

D O I：

10.1002/aelm.201600416

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Light-tunable resistive switching (RS) characteristics are demonstrated in a photochromophore (BMThCE)-based resistive random access memory. Triggered by nondestructive ultraviolet or visible light irradiation, two memory-type RS characteristics can be reversibly modulated in the same device upon a narrow range of applied voltage (<6 V), accompanied by the photochromophores in the active layer reversibly changed between ring-open state (namely, o-BMThCE) and ring-closed state (namely, c-BMThCE). The o-BMThCE-based memory exhibits a write-once-read-many characteristic with a high current on/off ratio of 10(5), while the c-BMThCE-based one shows a flash characteristic. Both of the RS characteristics present good nonvolatile stability with the resistance states maintained over 10(4) s without variation. This RS modulation is possibly related to the formation and rupture of conductive filaments, which formed along channels consisting of BMThCE trapping molecules. This work provides a new memory element for the design of light-controllable high density storage and data encryption technology.

引用

页数：7

共 81 条

[1] Neuromorphic Learning and Recognition With One-Transistor-One-Resistor Synapses and Bistable Metal Oxide RRAM [J].