Fabry-Perot Gunn laser

被引：8

作者：

Chung, S ^{[1
]}

Balkan, N ^{[1
]}

机构：

[1] Univ Essex, Dept Elect Syst Engn, Colchester CO4 3SQ, Essex, England

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 21期

关键词：

D O I：

10.1063/1.1937995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A truly monopolar GaAs Fabry-Perot cavity Gunn laser is demonstrated. The device is grown by metalorganic chemical vapor deposition on a semi-insulating GaAs substrate and consists of an n=4.6x10(17) cm(-3) doped GaAs active layer sandwiched between the AlxGa1-xAs (x=0.32) waveguiding layers. The operation of the device is based on the band to band recombination of impact-ionized nonequilibrium electron-hole pairs in the propagating high field domains in the Gunn diode, which is placed in a Fabry-Perot cavity, and biased above the threshold of negative differential resistance. Lasing from the device is observed at temperature T >= 95 K. The maximum power emitted from the device is P=25.4 mu W at lambda=840 nm and T=95 K. (c) 2005 American Institute of Physics.

引用

页码：1 / 2

页数：2

共 5 条

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