Built-in duty cycle corrector using coded phase blending scheme for DDR/DDR2 synchronous DRAM application

被引:10
作者
Kim, KH [1 ]
Cho, GH [1 ]
Lee, JB [1 ]
Cho, SI [1 ]
机构
[1] Samsung Elect, DRAM Dev, Hwasung, Gyeonggi Do, South Korea
来源
2003 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2003年
关键词
DLL; DCC; phase blending; DDR SDRAM;
D O I
10.1109/VLSIC.2003.1221229
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper describes DLL (delay locked loop) with built-in DCC (duty cycle correction) capability using a newly proposed coded phase blending scheme. The proposed scheme dramatically improves the DCC range and also enhances the total DLL performance. The DLL has been designed and fabricated within 1G-bit DDR (double data rate) synchronous DRAM using 0.11 mum process and the measurement data show that it has unlimited DCC range, faster turn-on speed and smaller jitter compared with our previous work [1].
引用
收藏
页码:287 / 288
页数:2
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