Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory

被引：21
作者：
Zhao, Jinshi [1 ]
Li, Yingchen [1 ]
Li, Jiacheng [1 ]
Zhou, Liwei [1 ]
机构：
[1] Tianjin Univ Technol, Sch Elect & Elect Engn, Tianjin Key Lab Film Elect & Commun Devices, 391 Bin Shui Xi Dao Rd, Tianjin 300384, Peoples R China
来源：
VACUUM | 2021年 / 191卷
基金：
中国国家自然科学基金;
关键词：
RRAM; Rapid thermal annealing; Amorphous to nanocrystal TaOx; THIN-FILMS; STATE; ENDURANCE; ENERGY; OXIDE;
D O I：
10.1016/j.vacuum.2021.110392
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The performance of resistive switching (RS) device based on sandwich structure is greatly affected by the characteristics of the RS layer, electrode, and interface. In this work, the effect of rapid thermal annealing (RTA) (300 degrees C for 120 s) on the RS performance of Ta/TaOx/Ru device was investigated. The discrete distribution in high resistance state (HRS) and low resistance state (LRS) was suppressed after RTA. Meanwhile, the endurance in oxygen RTA is higher 104 times than that of vacuum RTA. The optimized oxygen RTA is contributed to change the microstructure of TaOx (amorphous to nanocrystal), providing the local conductive path, and implant oxygens in top electrode (TE) Ta, acting as an oxygen source (reservoir). It is shown that the nanocrystal TaOx and the oxygen content in TE are intrinsically crucial to the RS behavior and the simple low temperature oxygen RTA is a powerful technique to optimize the RS performance.
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页数：6
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