Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors

被引：35
作者：
Hsiao, Ching-Lien
Hsu, Hsu-Cheng
Chen, Li-Chyong [1 ]
Wu, Chien-Ting
Chen, Chun-Wei
Chen, Min
Tu, Li-Wei
Chen, Kuei-Hsien
机构：
[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan
[4] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 18期
关键词：
D O I：
10.1063/1.2804568
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nearly defect-free InN microcrystals grown on Si(111) substrates have been realized by plasma-assisted molecular beam epitaxy. High-resolution transmission electron microscope images reveal that these microcrystals exhibit single-crystalline wurtzite structure. Low temperature photoluminescence (PL) shows a strong emission peak at 0.679 eV with a very narrow linewidth of 17 meV at excitation power density of 3.4 W/cm(2). Temperature-dependent PL spectra follow the Varshni equation well, and peak energy blueshifts by similar to 45 meV from 300 to 15 K. Power-density-dependent PL spectroscopy manifests direct near-band-edge transition. A low carrier density of 3 x 10(17) cm(-3) has been estimated from PL empirical relation, which is close to the critical carrier density of the Mott transition of 2 x 10(17) cm(-3). (C) 2007 American Institute of Physics.
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