Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices

被引：598

作者：

Zhang, Zhengwei ^{[1
]}

Chen, Peng ^{[1
,3
,4
]}

Duan, Xidong ^{[1
,3
]}

Zang, Ketao ^{[2
]}

Luo, Jun ^{[2
]}

Duan, Xiangfeng ^{[1
,3
,4
]}

机构：

[1] Hunan Univ, Coll Chem & Chem Engn, State Key Lab Chemo Biosensing & Chemometr, Changsha 410082, Hunan, Peoples R China

[2] Tianjin Univ Technol, Sch Mat, Inst New Energy Mat & Low Carbon Technol, Ctr Electron Microscopy, Tianjin 300384, Peoples R China

[3] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[4] Univ Calif Los Angeles, Calif Nanosyst Inst, Los Angeles, CA 90095 USA

来源：

SCIENCE | 2017年 / 357卷 / 6353期

基金：

美国国家科学基金会; 中国国家自然科学基金;

关键词：

LARGE-AREA; MONOLAYER; MOS2; TRANSISTORS; LAYERS; WS2; HETEROJUNCTIONS; DYNAMICS; FILMS; MONO;

D O I：

10.1126/science.aan6814

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report a general synthetic strategy for highly robust growth of diverse lateral heterostructures, multiheterostructures, and superlattices from two-dimensional (2D) atomic crystals. A reverse flow during the temperature-swing stage in the sequential vapor deposition growth process allowed us to cool the existing 2D crystals to prevent undesired thermal degradation and uncontrolled homogeneous nucleation, thus enabling highly robust block-by-block epitaxial growth. Raman and photoluminescence mapping studies showed that a wide range of 2D heterostructures (such as WS2-WSe2 and WS2-MoSe2), multiheterostructures (such as WS2-WSe2-MoS2 and WS2-MoSe2-WSe2), and superlattices (such as WS2-WSe2-WS2-WSe2-WS2) were readily prepared with precisely controlled spatial modulation. Transmission electron microscope studies showed clear chemical modulation with atomically sharp interfaces. Electrical transport studies of WSe2-WS2 lateral junctions showed well-defined diode characteristics with a rectification ratio up to 10(5).

引用

页码：788 / +

页数：5

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