Metal-organic chemical vapor deposition (MOCVD) of GeShTe-Based chalcogenide thin films

被引:0
作者
Tompa, Gary S. [1 ]
Sun, Shangzhu [1 ]
Rice, Catherine E. [1 ]
Cuchiaro, Joe [1 ]
Dons, Edwin [1 ]
机构
[1] Struct Mat Ind Inc, Unit 102, Piscataway, NJ 08854 USA
来源
MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES II | 2007年 / 997卷
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chalcogenide Random Access Memory (C-RAM) has shown significant promise in combining the desired attributes of an ideal memory, including: nonvolatility, fast read/write/erase speed, low read/write/erase voltage/power, high endurance, and radiation hardness. Current C-RAM production technology relies on sputtering to deposit the active chalcogenide layer. The sputtering process leads to difficulties in meeting requirements for device conformality (in particular-filling vias), film adherence, compositional control, wafer yield, and surface damage. Ultimately, a viable CVD manufacturing process is needed for high-density products to realize the full potential of C-RAM. In this work, we discuss the Metal-organic Chemical Vapor Deposition (MOCVD) tool technology used to produce the films and report the materials properties of GeSbTe-based chalcogenide thin films grown in small research scale and in large production scale MOCVD reactors. Films were grown at low pressures at temperatures ranging from 350 C to 600 C. X-Ray Fluorescence (XRF) and Auger Electron Spectroscopy (AES) were performed and determined that the film composition is controllable and uniform.
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页码:275 / 280
页数:6
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