Determination of band offset in InP/YSZ hetero-junction by X-ray photoelectron spectroscopy

被引：0
作者：
Yao, Jian Ke [1 ]
Ye, Fan [1 ]
Wang, Bo [1 ]
Cai, Xing-Min [1 ]
Fan, Ping [1 ]
机构：
[1] Shenzhen Univ, Coll Phys & Energy, Shenzhen Key Lab Adv Thin Films & Applicat, Shenzhen 518060, Peoples R China
来源：
VACUUM | 2018年 / 147卷
关键词：
Band offsets; InP/YSZ hetero-structure; X-ray photoelectron spectroscopy; YSZ thin film; Optical properties; Microstructures;
D O I：
10.1016/j.vacuum.2017.10.032
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Y-stabilized ZrO2 (YSZ) was one of the familiar high dielectric constant films used in InP field effect transistors. However, the structure and optical properties of YSZ film deposited on InP substrate were rarely reported. The band offsets in InP/YSZ hetero-junction was an important parameter, which had not been measured. In the work, YSZ films were deposited on InP substrates by sputtering. The optical properties and structures of YSZ films and InP/YSZ interface were characterized. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band of the InP/YSZ heterostructure. A value of 1.4 eV was obtained with In 3d5 as the reference energy level. With the band gap of 5.8 eV for YSZ and 1.3 eV for InP, this indicated a conduction band offset of 3.1 eV in the system. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：143 / 148
页数：6
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