Magnetoexciton in the thin AlAs/GaAs quantum well

被引：6

作者：

Chang, CP ^{[1
]}

Chen, RB

Lu, YT

机构：

[1] Fortune Jr Coll Technol & Commerce, Dept Phys, Kaohsiung, Taiwan

[2] Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 02期

关键词：

D O I：

10.1016/S0038-1098(98)00317-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report a theoretical study on the magneto-optical property of a thin AlAs/GaAs quantum well. Our model includes both the excitonic effect and Gamma-X valley mixing. A delta-like interfacial potential introduced by H.C. Liu [Appl. Phys. Lett., 51, 1987, 1019] is employed to describe the Gamma-X mixing, which leads to a set of coupled differential equations in mixing type-I and type-II excitons. The eigenvalues and eigenfunctions thus obtained are then used to calculate the absorption spectrums for various strengths of the perpendicular magnetic field. Our result shows a field induced Type-I to Type-II magnetoexciton transition at 24 T for AlAs(25 Angstrom)/GaAs(31 Angstrom) quantum well. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：99 / 104

页数：6

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