Design of low power silicon electro optic modulators based on hybrid plasmonic ring resonator

In this paper, an ITO-based hybrid plasmonic ring resonator modulator has been designed and proposed. Improving the extinction ratio (ER) and the quality factor is considered in designing the modulator. The proposed structure in this paper seeks to reduce the capacitance by reducing the surface between silicon and ITO/HfO2 interface in the ring. Two structures have been proposed based on the ring resonator. In the first structure, high-quality factor, low insertion loss (IL), and low power consumption are obtained, equal to 777, 0.28 dB, and 103fJ. In the second proposed structure, the ER is 12.22 dB, and the quality factor is 514. The finite-difference time-domain (FDTD) method has been used to investigate the modulator characteristic.