Scalable Multi-harmonic Large-Signal Model for AlGaN/GaN HEMTs Including a Geometry-Dependent Thermal Resistance

被引：0

作者：

Wang Changsi ^{[1
]}

Xu Yuehang ^{[1
]}

Wen Zhang ^{[1
]}

Chen Zhikai ^{[1
]}

Xu Ruimin ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Sichuan, Peoples R China

来源：

CHINESE JOURNAL OF ELECTRONICS | 2017年 / 26卷 / 05期

基金：

中国国家自然科学基金;

关键词：

GaN HEMTs; Large-signal model; Scalable model; Thermal resistance; EXTRACTION; DEVICES; FETS;

D O I：

10.1049/cje.2017.07.014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A scalable large-signal model of AlGaN/GaN High electron mobility transistors (HEMTs) suitable for multi-harmonic characterizations is presented. This model is fulfilled utilizing an improved drain-source current (I-ds) formulation with a geometry-dependent thermal resistance (R-th) and charge-trapping modification. The Ids model is capable of accurately modeling the high order transconductance (g(m)), which is significant for the prediction of multi-harmonic characteristics. The thermal resistance is identified by the electro-thermal Finite element method (FEM) simulations, which are physically and easily scalable with the finger numbers, unit gate width and power dissipations of the device. Accurate predictions of the quiescent currents, S-parameters up to 40GHz, and large-signal harmonic performance for the devices with different gate peripheries have been achieved by the proposed model.

引用

页码：952 / 959

页数：8

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