Monolithic 3D TSV-based high-voltage, high-temperature capacitors

被引：3

作者：

Gruenler, Saeideh ^{[1
]}

Rattmann, Gudrun ^{[1
]}

Erlbacher, Tobias ^{[1
]}

Bauer, Anton J. ^{[1
]}

Frey, Lothar ^{[2
]}

机构：

[1] Fraunhofer IISB, Schottkystr 10, D-91058 Erlangen, Germany

[2] Univ Erlangen Nurnberg, Chair Electron Devices, D-91054 Erlangen, Germany

来源：

MICROELECTRONIC ENGINEERING | 2016年 / 156卷

关键词：

TSV-based capacitors; Dielectric breakdown; Integration density; Through-silicon-via technology;

D O I：

10.1016/j.mee.2016.02.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, high-voltage monolithic 3D capacitors operating at 100 V (6 MV/cm) are fabricated by the use of a through silicon-via-based technology. Electric characteristics of the monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of the planar capacitors with an equal contact area and identical dielectric thicknesses. The impact of the 3D architecture of capacitors on their electrical properties is studied for various patterns and geometries. TSV-based capacitors with a hexagonal arrangement of the holes and 20 mu m hole diameters exhibit a capacitance deviation of 0.8% at 150 degrees C in accumulation, justifying the capability of TSV-based capacitors to operate even at high-temperatures. Furthermore, a high dielectric-breakdown voltage of 280 V (18 MV/cm) was realized using a thick hybrid dielectric stack of SiO2/Si3N4. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：19 / 23

页数：5

共 14 条

[11]

SHARMA U, 2008, P 2 EL SYST TECHN C, P485

[12] Low temperature technology options for integrated high density capacitors [J].

Soussan, P. ;

Goux, L. ;

Dehan, M. ;

Vander Meeren, H. ;

Potoms, G. ;

Wouters, D. J. ;

Beyne, E. .

56TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE 2006, VOL 1 AND 2, PROCEEDINGS, 2006, :515-+

[13]

vom Dorp J., 2011, THESIS

[14] High-κ gate dielectrics:: Current status and materials properties considerations [J].

Wilk, GD ;

Wallace, RM ;

Anthony, JM .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5243-5275

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