Enhanced modulation bandwidth (20 GHz) of In0.4Ga0.6As-GaAs self-organized quantum-dot lasers at cryogenic temperatures:: Role of carrier relaxation and differential gain

被引：36

作者：

Klotzkin, D ^{[1
]}

Kamath, K

Vineberg, K

Bhattacharya, P

Murty, R

Laskar, J

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 07期

基金：

美国国家科学基金会;

关键词：

modulation bandwidth; quantum-dot lasers;

D O I：

10.1109/68.681274

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of the threshold current, slope efficiency and optical modulation characteristics of self-assembled InGaAs-GaAs quantum-dot lasers have been made in the temperature range of 20-200 K in order to understand the carrier dynamics in these devices. The de characteristics of these devices showed a region of almost temperature independent threshold current up to 85 K (T-0 = 670 K) with a maximum slope efficiency at 150 K, The maximum measured bandwidth increased from 5 GHz at room temperature to 20 GHz at 80 K, This is consistent with the bandwidth being limited by carrier relaxation time through electron-hole scattering.

引用

页码：932 / 934

页数：3

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