Oblique angle deposited InN quantum dots array for infrared detection

被引：11
作者：
Dwivedi, Shyam Murli Manohar Dhar [1 ]
Ghosh, Anupam [1 ]
Ghadi, Hemant [2 ]
Murkute, Punam [3 ]
Chinnamuthu, P. [4 ]
Chakrabartty, Shubhro [1 ,5 ]
Chakrabarti, Subhananda [2 ]
Bhunia, Satyaban [6 ]
Mondal, Aniruddha [1 ]
机构：
[1] Natl Inst Technol Durgapur, Dept Phys, Mahatma Gandhi Ave, Durgapur 713209, W Bengal, India
[2] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
[3] Indian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay 400076, Maharashtra, India
[4] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Dimapur 797103, India
[5] Auroras Engn Coll, Dept Elect & Commun Engn, Bhoingir 508116, Telangana, India
[6] SAHA Inst Nucl Phys, Surface Phys & Mat Sci Div, Kolkata 700064, India
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2018年 / 766卷
关键词：
Oblique angle deposition; Indium nitride; Quantum dots; Infrared detector; DEPENDENT PHOTOLUMINESCENCE PROPERTIES; ROOM-TEMPERATURE; BAND-GAP; EPITAXY; GROWTH; NANOSTRUCTURE; SUBSTRATE; SI(111); ORIGIN; FILMS;
D O I：
10.1016/j.jallcom.2018.06.346
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Indium Nitride (InN) quantum dots (QDs) were synthesized on Si substrate by oblique angle deposition method. The deposited InN QDs were of the order of 5-50 nm in diameter with density similar to 7 x 10(9)/cm(2) . The synthesized InN QDs were nearly single crystalline, confirmed from the diffraction peak in the < 110 > direction. Photoluminescence (PL) measurement showed peak emission at similar to 1138 nm (1.08 eV) at 19 K. The PL emission energy exhibited blue shift and the intensity reduced with an increase in temperature. The high optical band gap emission of the InN QDs is possibly due to energy level quantization resulted from size reduction. The free carrier concentration was found to be similar to 2 x 10(18) cm(-3). The device selectively detected the 1080 nm (1.13 eV) wavelength with maximum responsivity near the optical band edge at 10 K and room temperature (300 K) respectively. The external quantum efficiency of similar to 4.1% was calculated for the detector at 10 K. The device showed excellent temporal response with rise and fall times of 3.181 s and 3.408 s respectively at 10 K. (C) 2018 Elsevier B.V. All rights reserved.
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页码：297 / 304
页数：8
相关论文
共 32 条
[1]   Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing [J].
Alouane, M. H. Hadj ;
Ilahi, B. ;
Maaref, H. ;
Salem, B. ;
Aimez, V. ;
Morris, D. ;
Gendry, M. .
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (10) :9251-9255
[2]   Current-voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors [J].
Asgari, A. ;
Fazli, N. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 46 :174-176
[3]   Effects of substrate pre-nitridation and post-nitridation processes on InN quantum dots with crystallinity by droplet epitaxy [J].
Chen, Hugo Juin-Yu ;
Su, Yang-Zhe ;
Yang, Dian-Long ;
Huang, Tseh-Wet ;
Yu, Ing-Song .
SURFACE & COATINGS TECHNOLOGY, 2017, 324 :491-497
[4]   Origin of the temperature dependence of the band gap of PbS and PbSe quantum dots [J].
Dey, P. ;
Paul, J. ;
Bylsma, J. ;
Karaiskaj, D. ;
Luther, J. M. ;
Beard, M. C. ;
Romero, A. H. .
SOLID STATE COMMUNICATIONS, 2013, 165 :49-54
[5]   Enhanced photoemission from glancing angle deposited SiOx-TiO2 axial heterostructure nanowire arrays [J].
Dhar, J. C. ;
Mondal, A. ;
Singh, N. K. ;
Chattopadhyay, K. K. .
JOURNAL OF APPLIED PHYSICS, 2013, 113 (17)
[6]   Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detection [J].
Dwivedi, Shyam Murli Manohar Dhar ;
Chakrabartty, Shubhro ;
Ghadi, Hemant ;
Murkute, Punam ;
Chavan, Vinayak ;
Chakrabarti, Subhananda ;
Bhunia, Satyaban ;
Mondal, Aniruddha .
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 722 :872-877
[7]   Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement [J].
Guo, L. ;
Wang, X. Q. ;
Zheng, X. T. ;
Yang, X. L. ;
Xu, F. J. ;
Tang, N. ;
Lu, L. W. ;
Ge, W. K. ;
Shen, B. ;
Dmowski, L. H. ;
Suski, T. .
SCIENTIFIC REPORTS, 2014, 4
[8]   Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature [J].
Gwo, S ;
Wu, CL ;
Shen, CH ;
Chang, WH ;
Hsu, TM ;
Wang, JS ;
Hsu, JT .
APPLIED PHYSICS LETTERS, 2004, 84 (19) :3765-3767
[9]   Ambient pressure, low-temperature synthesis and characterization of colloidal InN nanocrystals [J].
Hsieh, Jennifer C. ;
Yun, Dong Soo ;
Hu, Evelyn ;
Belcher, Angela M. .
JOURNAL OF MATERIALS CHEMISTRY, 2010, 20 (08) :1435-1437
[10]   Enhanced photocurrent of a nitride-based photodetector with InN dot-like structures [J].
Hsu, Lung-Hsing ;
Lin, Chien-Chung ;
Han, Hau-Vei ;
Lin, Da-Wei ;
Lo, Yen-Hua ;
Hwang, Yi-Chia ;
Kuo, Hao-Chung .
OPTICAL MATERIALS EXPRESS, 2014, 4 (12) :2565-2573
1234