High-Temperature Thermoelectric Characterization of III-V Semiconductor Thin Films by Oxide Bonding

被引：8

作者：

Bahk, Je-Hyeong ^{[1
]}

Zeng, Gehong ^{[1
]}

Zide, Joshua M. O. ^{[2
]}

Lu, Hong ^{[1
,3
]}

Singh, Rajeev ^{[4
]}

Liang, Di ^{[1
]}

Ramu, Ashok T. ^{[1
]}

Burke, Peter ^{[3
]}

Bian, Zhixi ^{[4
]}

Gossard, Arthur C. ^{[3
]}

Shakouri, Ali ^{[4
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Cruz, Dept Elect Engn, Santa Cruz, CA 95064 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 08期

关键词：

High-temperature measurements; thermoelectric; oxide bonding; substrate removal; CHEMICAL-VAPOR-DEPOSITION; SILICON-NITRIDE; NANOPARTICLES; ELECTRON; PLASMA;

D O I：

10.1007/s11664-010-1258-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A device fabrication and measurement method utilizing a SiO2-SiO2 covalent bonding technique is presented for high-temperature thermoelectric characterization of thin-film III-V semiconductor materials that suffer from the side-effect of substrate conduction at high temperatures. The proposed method includes complete substrate removal, high-temperature surface passivation, and metallization with a Ti-W-N diffusion barrier. A thermoelectric material, thin-film ErAs:InGaAlAs metal/semiconductor nanocomposite grown on a lattice-matched InP substrate by molecular beam epitaxy, was transferred onto a sapphire substrate using the oxide bonding technique at 300A degrees C, and its original InP substrate, which is conductive at high temperatures, was removed. Electrical conductivities and Seebeck coefficients were measured from room temperature to 840 K for this material on both the InP and sapphire substrates, and the measurement results clearly show that the InP substrate effect was eliminated for the sample on the sapphire substrate. A strain experiment has been conducted to investigate the effect of strain on electrical conductivity.

引用

页码：1125 / 1132

页数：8

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