Power semiconductor device figure of merit for high-power-density converter design applications

被引：32

作者：

Wang, Hongfang ^{[1
]}

Wang, Fred ^{[1
]}

Zhang, Junhong ^{[1
]}

机构：

[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Ctr Power Elect Syst, Blacksburg, VA 24061 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 01期

基金：

美国国家科学基金会;

关键词：

power converter; power density figure of merit (PDFOM); semiconductor power device;

D O I：

10.1109/TED.2007.910573

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to help device selection and optimal application in high-power-density converter designs, a new power semiconductor device figure of merit (FOM)-power density FOM-is proposed, with consideration of power device conduction and switching losses, thermal characteristics, and package. The FOM is derived based on the device theory, and its validity and usefulness are demonstrated with a practical design example.

引用

页码：466 / 470

页数：5

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