The impact of p-doping on the static and dynamic properties of 1.5 μm quantum dash lasers on InP

被引：15
作者：
Hein, S. [1 ]
von Hinten, V. [1 ]
Hoefling, S. [1 ]
Forchel, A. [1 ]
机构：
[1] Univ Wurzburg, D-97074 Wurzburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期
关键词：
D O I：
10.1063/1.2830020
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
p-type modulation doping in the range of 0-100 acceptors per quantum dash (QDash) has been carried out to investigate the impact on QDash lasers on (100) InP. The differential gain was found to increase more than 50% for doping concentrations of 50 acceptors per QDash for constant cavity length lasers. However, this benefit is overcompensated by enhanced gain compression and enlarged thermal heating due to high internal losses in highly p-doped devices. The maximum modulation bandwidth of 8 GHz in continuous wave operation at room temperature is, therefore, obtained for a moderate p-doping level of 10 holes per QDash. (c) 2008 American Institute of Physics.
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