Heteroepitaxial 3C-SiC on Si (100) with flow-modulated carbonization process conditions

被引：5

作者：

Li, Yun ^{[1
,2
]}

Zhao, Zhifei ^{[2
]}

Yu, Le ^{[1
]}

Wang, Yi ^{[2
]}

Yin, Zhijun ^{[2
]}

Li, Zhonghui ^{[2
]}

Han, Ping ^{[1
]}

机构：

[1] Nanjing Univ, Coll Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[2] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing 210016, Jiangsu, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2019年 / 506卷

关键词：

Chemical vapor deposition processes; Semiconducting materials; Heteroepitaxial 3C-SiC films; Flow-modulated carbonization process; CHEMICAL-VAPOR-DEPOSITION; VOID FORMATION; THIN-FILM; DEGREES-C; GROWTH; SI(100); EPITAXY; DEVICES; SEMICONDUCTOR; PARAMETERS;

D O I：

10.1016/j.jcrysgro.2018.09.037

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A flow-modulated carbonization process is applied to grow a 3C-SiC thin film of high crystal quality on the Si (1 0 0) substrate using low pressure chemical vapor deposition. The flow-modulated carbonization was performed by flowing intermittent carbon-based precursor. The crystal quality of the so-obtained 3C-SiC is compared with that fabricated via the conventional carbonization process, using X-ray diffractometry and Raman spectra data, indicates a better crystal quality using this flow-modulated carbonization process. Moreover, Si out-diffusion from Si substrates is suppressed in the flow-modulated carbonization process, resulting in a reduced density of voids. Consequently, the flow-modulated carbonization process plays an active role in enhancing the crystal quality and reducing the void formation. This is the first report of the heteroepitaxial growth of 3C-SiC layers using the flow-modulated carbonization process.

引用

页码：114 / 116

页数：3

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