OH radical activation of ZnO growth in remote plasma metalorganic chemical vapor deposition

被引：10
作者：
Nakamura, A
Shigemori, S
Shimizu, Y
Aoki, T
Tanaka, A
Temmyo, J
机构：
[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan
[2] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2003年 / 42卷 / 7A期
关键词：
ZnO; remote plasma; MOCVD; optical spectroscopy; OH radicals;
D O I：
10.1143/JJAP.42.L775
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A possible role of OH radicals in the formation mechanism of ZnO thin films by remote plasmaenhanced metalorganic chemical vapor deposition (RPE-MOCVD) was investigated. The plasma was generated by a radio frequency discharge in O-2. The change of the carrier gas from H-2 to N-2 resulted in a significant decrease in deposition rate. Moreover, growth rate changed also with the content of H-2 of an oxygen-hydrogen mixture gas in a reactor. Optical spectroscopic investigation of the light emitted by the reactor gas in the vicinity of a substrate showed that the effect of the carrier gas on deposition rate is related to the occurrence of OH radicals.
引用
收藏
页码：L775 / L777
页数：3
相关论文
共 15 条
  • [1] ZnSe growth by radical assisted MOCVD using hollow cathode plasma
    Aoki, T
    Ikeda, T
    Korzec, D
    Hatanaka, Y
    [J]. THIN SOLID FILMS, 2000, 368 (02) : 244 - 248
  • [2] H2O-vapor-activated ZnO growth on a-face sapphire substrates by metalorganic molecular-beam epitaxy
    Ashrafi, ABMA
    Suemune, I
    Kumano, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (5A): : 2851 - 2854
  • [3] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES
    BHATNAGAR, M
    BALIGA, BJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) : 645 - 655
  • [4] CLAIRE PD, 1997, PHYS REV B, V56, P13543
  • [5] ZnO thin films prepared by remote plasma-enhanced CVD method
    Haga, K
    Kamidaira, M
    Kashiwaba, Y
    Sekiguchi, T
    Watanabe, H
    [J]. JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 77 - 80
  • [6] Scanning tunneling microscopic and spectroscopic characterization of diamond film prepared by capacitively coupled radio frequency CH3OH plasma with OH radical injection
    Ito, M
    Murata, K
    Aiso, K
    Hori, M
    Goto, T
    Hiramatsu, M
    [J]. APPLIED PHYSICS LETTERS, 1997, 70 (16) : 2141 - 2143
  • [7] Radio frequency hollow cathode jet: optical emission study
    Korzec, D
    Nithammer, D
    Engemann, J
    Ikeda, T
    Aoki, T
    Hatanaka, Y
    [J]. SURFACE & COATINGS TECHNOLOGY, 2001, 142 : 21 - 27
  • [8] GROWTH OF EPITAXIAL ZNO THIN-FILMS BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
    LAU, CK
    TIKU, SK
    LAKIN, KM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : 1843 - 1847
  • [9] Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
    Look, DC
    Reynolds, DC
    Litton, CW
    Jones, RL
    Eason, DB
    Cantwell, G
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (10) : 1830 - 1832
  • [10] Formation mechanism for TiOx thin film obtained by remote plasma enhanced chemical vapor deposition in H2-O2 mixture gas plasma
    Nakamura, M
    Kato, S
    Aoki, T
    Sirghi, L
    Hatanaka, Y
    [J]. THIN SOLID FILMS, 2001, 401 (1-2) : 138 - 144
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