Elevated-Metal-Metal-Oxide Thin-Film Transistor: Technology and Characteristics

被引：40

作者：

Lu, Lei ^{[1
]}

Li, Jiapeng ^{[1
]}

Feng, Zhuoqun ^{[1
]}

Kwok, Hoi Sing ^{[1
]}

Wong, Man ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 06期

关键词：

Indium-gallium-zinc oxide (IGZO); thin-film transistor; elevated metal; back-channel etched; mask-count; ZINC-OXIDE; STABILITY;

D O I：

10.1109/LED.2016.2552638

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new device architecture, dubbed elevated-metal-metal-oxide (EMMO) thin-film transistor (TFT), is presently proposed. During a heat-treatment process in oxygen, conductive source and drain regions spontaneously populated by donor defects are formed, while the defects in the channel region are simultaneously passivated. Compared with that of the conventional back-channel-etched TFT, this architecture inherently accommodates an etch-stop/passivation layer without increasing the mask count. EMMO TFT demonstrated using indium-gallium-zinc oxide as an active layer exhibited good performance metrics: a peak field-effect mobility of similar to 14 cm(2)/Vs, a steepest pseudo-subthreshold slope of similar to 120 mV/decade, a leakage current lower than similar to 10(-14) A, an on/off-current ratio above similar to 10(10), and stability against environmental and electrical stress.

引用

页码：728 / 730

页数：3

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