The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure

被引：0
|
作者：
Teisseyre, H
Ochalski, TJ
Perlin, P
Suski, T
Leszczynski, M
Grzegory, I
Bockowski, M
Lucznik, B
Bugajski, M
Palczewska, M
Gebicki, W
机构：
[1] Polish Acad Sci, High Pressure Res Ctr, PL-00142 Warsaw, Poland
[2] Inst Electron Technol, PL-02688 Warsaw, Poland
[3] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[4] Warsaw Univ Technol, Inst Phys, PL-00661 Warsaw, Poland
来源：
HIGH PRESSURE RESEARCH | 2000年 / 18卷 / 1-6期
关键词：
high pressure; GaN; crystal growth; rare earth elements;
D O I：
10.1080/08957950008200945
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Oxygen contamination is the main source of free electrons in bulk GaN grown at high-pressure. We used erbium as a promising getter/compensation center to reduce the electron content in GaN. Both optical and electrical measurements indicate the reduction of electron concentration from the initial 6 x 10(19) cm(-3) down to 1 x 10(19) cm(-3) A photoluminescence study proves that erbium is incorporated into the GaN host lattice, and emits light at similar to 1.5 mum.
引用
收藏
页码：35 / 39
页数：5
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