Ag/HfO2-based Threshold Switching Memristor as an Oscillatory Neuron

被引:0
作者
Hua, Qilin [1 ]
Jiang, Chunsheng [2 ]
Hu, Weiguo [1 ]
机构
[1] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China
[2] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Beijing, Peoples R China
来源
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) | 2021年
基金
美国国家科学基金会;
关键词
Memristor; Neuron; Oscillation;
D O I
10.1109/EDTM50988.2021.9420814
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Artificial neuron with low-power feature is critical for the implement of neuromorphic systems. In this work, Ag/HfO2-based threshold switching memristor is used as an oscillatory neuron, due to its ultralow leakage current and small operation voltage. Low-temperature measurement is conducted to analyze the conduction mechanism. Furthermore, self-oscillation dynamics are investigated by simulation. The oscillation frequency is proportional to the input pulse voltage, which is suitable for performing neuronal functions (e.g., threshold, and fire).
引用
收藏
页数:3
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