Locating disturbances in semiconductor manufacturing with stepwise regression

被引:13
作者
McCray, AT [1 ]
McNames, J
Abercrombie, D
机构
[1] Sun Microsyst, Hillsboro, OR 97124 USA
[2] Portland State Univ, Integrated Circuits Design & Test Lab, Portland, OR 97207 USA
[3] Mentor Graph Corp, Wilsonville, OR 97070 USA
关键词
analysis of variance (ANOVA); fault isolation; semiconductor manufacturing; statistical process control and monitoring; stepwise regression; variance reduction; variance source isolation;
D O I
10.1109/TSM.2005.852118
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ability to locate disturbances in semiconductor manufacturing processes is critical to developing and maintaining a high yield. Analysis of variance (ANOVA), the best current practice for this problem, consists of conducting a series of hypothesis tests at each individual processing step. This approach can lead to excessive false alarms and limited sensitivity when the process contains more than one disturbance. We describe how this problem can be framed as a subset selection problem and propose two new methods based on stepwise regression. Results of over 90 000 Monte Carlo simulations suggest that these new SWR methods locate disturbances with fewer false positives and false negatives than ANOVA. This means process engineers will spend less time responding to false alarms and will be able to locate real disturbances more often.
引用
收藏
页码:458 / 468
页数:11
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