Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors

被引：5

作者：

Lee, Yujin ^{[1
]}

Seo, Seunggi ^{[1
]}

Nam, Taewook ^{[1
,2
]}

Lee, Hyunho ^{[1
]}

Yoon, Hwi ^{[1
]}

Sun, Sangkyu ^{[1
]}

Oh, Il-Kwon ^{[1
,3
]}

Lee, Sanghun ^{[1
]}

Shong, Bonggeun ^{[4
]}

Seo, Jin Hyung ^{[5
]}

Seok, Jang Hyeon ^{[5
]}

Kim, Hyungjun ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, 50 Yonsei Ro, Seoul 120749, South Korea

[2] Univ Colorado Boulder, Dept Chem, Boulder, CO 80309 USA

[3] Ajou Univ, Dept Elect & Comp Engn, Suwon 16499, South Korea

[4] Hongik Univ, Dept Chem Engn, Seoul 04066, South Korea

[5] Hansol Chem, 873 Gwahak Ro, Wanju Gun, Jeollabuk Do, South Korea

来源：

APPLIED SURFACE SCIENCE | 2021年 / 568卷

关键词：

Atomic layer deposition; Precursor; Tungsten; Halide; Metal organic; Density functional theory; THIN-FILMS; RESISTIVITY; ALD; KINETICS; WNX; WF6; CVD;

D O I：

10.1016/j.apsusc.2021.150939

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We compared the growth characteristics and film properties of tungsten (W) thin films prepared by atomic layer deposition (ALD) using two newly synthesized precursors, tungsten pentachloride (WCl5) and ethylcyclopentadienyltungsten(V) tricarbonyl hydride (HEtCpW(CO)3), with Ar/H2 plasma as the reactant. The purpose of this study was to evaluate the suitability of these precursors for W thin films used in interconnect technology. The growth characteristics and film properties were significantly affected by the ligands of the precursors. The chemical compositional analysis results showed that high-purity thin films were obtained using the WCl5 precursor, compared to the films obtained using the HEtCpW(CO)3 precursor, which were relatively high in carbon content and oxygen impurities. The W thin films obtained from the WCl5 precursor showed superior electrical properties compared to those of the HEtCpW(CO)3 precursor, which were related to the crystallinity and film density in addition to the impurities. These results provide profitable information regarding the selection of a pertinent precursor for the device fabrication.

引用

页数：8

共 43 条

[1] CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN BY H2 REDUCTION OF WCL6 [J].

AMMERLAAN, JAM ;

BOOGAARD, DRM ;

VANDERPUT, PJ ;

SCHOONMAN, J .

APPLIED SURFACE SCIENCE, 1991, 53 :24-29

[2] Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia [J].

Becker, JS ;

Gordon, RG .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2239-2241

[3] Thermal atomic layer deposition of tungsten carbide films from WCl6 and AlMe3 [J].

Blakeney, Kyle J. ;

Winter, Charles H. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (01)

[4] Kinetics of Adsorption of Methylcyclopentadienyl Manganese Tricarbonyl on Copper Surfaces and Implications for the Atomic Layer Deposition of Thin Solid Films [J].

Bouman, Menno ;

Zaera, Francisco .

JOURNAL OF PHYSICAL CHEMISTRY C, 2016, 120 (15) :8232-8239

[5] Nitrogen-doped tungsten oxide nanowires: Low-temperature synthesis on Si, and electrical, optical, and field-emission properties [J].

Chang, Mu-Tung ;

Chou, Li-Jen ;

Chueh, Yu-Lun ;

Lee, Yu-Chen ;

Hsieh, Chin-Hua ;

Chen, Chii-Dong ;

Lan, Yann-Wen ;

Chen, Lih-Juann .

SMALL, 2007, 3 (04) :658-664

[6] Phase, grain structure, stress, and resistivity of sputter-deposited tungsten films [J].

Choi, Dooho ;

Wang, Bincheng ;

Chung, Suk ;

Liu, Xuan ;

Darbal, Amith ;

Wise, Adam ;

Nuhfer, Noel T. ;

Barmak, Katayun ;

Warren, Andrew P. ;

Coffey, Kevin R. ;

Toney, Michael F. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (05)

[7] Conformality in atomic layer deposition: Current status overview of analysis and modelling [J].

Cremers, Veronique ;

Puurunen, Riikka L. ;

Dendooven, Jolien .

APPLIED PHYSICS REVIEWS, 2019, 6 (02)

[8] PREPARATION AND NEUTRONIC STUDIES OF TUNGSTEN CARBIDE COMPOSITE [J].

Dash, T. ;

Nayak, B. B. ;

Abhangi, M. ;

Makwana, R. ;

Vala, S. ;

Jakhar, S. ;

Rao, C. V. S. ;

Basu, T. K. .

FUSION SCIENCE AND TECHNOLOGY, 2014, 65 (02) :241-247

[9] Atomic layer deposition of tungsten(III) oxide thin films from W2(NMe2)6 and water:: Precursor-based control of oxidation state in the thin film material [J].

Dezelah, Charles L. ;

El-Kadri, Oussama M. ;

Szilagyi, Imre M. ;

Campbell, Joseph M. ;

Arstila, Kai ;

Niinisto, Lauri ;

Winter, Charles H. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (30) :9638-9639

[10] Kinetics of the WF6 and Si2H6 surface reactions during tungsten atomic layer deposition [J].

Elam, JW ;

Nelson, CE ;

Grubbs, RK ;

George, SM .

SURFACE SCIENCE, 2001, 479 (1-3) :121-135

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