Three-dimensional atomic images of As/Si(111) obtained by derivative photoelectron holography

被引：31

作者：

Luh, DA

Miller, T

Chiang, TC

机构：

[1] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[2] Univ Illinois, Frederick Seitz Mat Res Lab, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 81卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.81.4160

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The atomic structure of As-terminated Si(111) is imaged by a new technique of photoelectron holography based on differential measurements. The improved sensitivity of this technique allows second nearest neighbors to be detected. Images deduced from both the As and the Si core level emission provide a detailed three-dimensional view of the bonding structure involving the top three atomic layers. The results provide direct evidence for As replacement of the top Si atomic layer.

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页码：4160 / 4163

页数：4

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