Signatures of electronic nematicity in (111) LaAlO3/SrTiO3 interfaces

被引：7

作者：

Davis, S. ^{[1
,2
]}

Huang, Z. ^{[3
,4
]}

Han, K. ^{[3
,4
]}

Ariando ^{[3
,4
,5
]}

Venkatesan, T. ^{[3
,4
,5
,6
,7
]}

Chandrasekhar, V. ^{[1
,2
]}

机构：

[1] Northwestern Univ, Grad Program Appl Phys, 2145 Sheridan Rd, Evanston, IL 60208 USA

[2] Northwestern Univ, Dept Phys & Astron, 2145 Sheridan Rd, Evanston, IL 60208 USA

[3] Natl Univ Singapore, NUSNNI Nanocore, Singapore 117411, Singapore

[4] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore

[5] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore 117456, Singapore

[6] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[7] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

TRANSITION; SRTIO3;

D O I：

10.1103/PhysRevB.97.041408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The two-dimensional conducting gas (2DCG) that forms at the interface between LaAlO3 (LAO) and SrTiO3 (STO) has been widely studied due to the multitude of in situ tunable phenomena that exist at the interface. Recently it has been shown that nearly every property of the 2DEG that forms at the interface of (111) oriented LAO/STO is strongly anisotropic with respect to the in-plane crystal direction. This in-plane rotational symmetry breaking points to the existence of an electronic nematic phase at the interface that can be modified by an in situ electrostatic back-gate potential. Here we show that the onset temperature of the anisotropy in the longitudinal resistance is T approximate to 22 K, which does not match up with any known structural transition, and coincides with the onset of anisotropy in the Hall response of the system. Furthermore, below 22 K, charge transport is activated in nature with different activation energies along the two in-plane crystal directions. Such a response implies that the band edges along the two directions are different and provides further evidence of an electronic nematic state at the interface.

引用

页数：6

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