Anomalous pressure dependence of the electronic transport and anisotropy in SrIrO3 films

被引:4
|
作者
Zaitsev, A. G. [1 ]
Beck, A. [1 ]
Jaiswal, A. K. [1 ,2 ]
Singh, R. [2 ]
Schneider, R. [1 ]
Le Tacon, M. [1 ]
Fuchs, D. [1 ]
机构
[1] Karlsruhe Inst Technol, Inst Solid State Phys, Karlsruhe, Germany
[2] Indian Inst Technol Delhi, Dept Phys, New Delhi 110016, India
关键词
iridates; thin films; electronic transport; ELECTRICAL-RESISTIVITY; TRANSITION; GPA;
D O I
10.1088/1361-648X/ab8a9e
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Iridate oxides display exotic physical properties that arise from the interplay between a large spin-orbit coupling and electron correlations. Here, we present a comprehensive study of the effects of hydrostatic pressure on the electronic transport properties of SrIrO3 (SIO), a system that has recently attracted a lot of attention as potential correlated Dirac semimetal. Our investigations on untwinned thin films of SIO reveal that the electrical resistivity of this material is intrinsically anisotropic and controlled by the orthorhombic distortion of the perovskite unit cell. These effects provide another evidence for the strong coupling between the electronic and lattice degrees of freedom in this class of compounds. Upon increasing pressure, a systematic increase of the transport anisotropies is observed. The anomalous pressure-induced changes of the resistivity cannot be accounted for by the pressure dependence of the density of the electron charge carriers, as inferred from Hall effect measurements. Moreover, pressure-induced rotations of the IrO6 octahedra likely occur within the distorted perovskite unit cell and affect electron mobility of this system.
引用
收藏
页数:8
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