Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques

We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfaces. The devices are characterized by means of capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and conductance transient analyses. Our results show that a simple cleaning step of the semiconductor surface prior to insulator deposition, and a post deposition RTA process are sufficient to obtain good-quality structures, the n-type being better than the p-type. In both cases, we conclude that a dielectric composition of x = 1.50 seems to be the best choice, and that the most adequate RTA temperature is between 500 degreesC and 600 degreesC.