Narrow band micro-machined band pass filter and a surface-mountable topology.

被引：0

作者：

Chatras, M ^{[1
]}

Blondy, P ^{[1
]}

Cros, D ^{[1
]}

Vendier, O ^{[1
]}

Drevon, C ^{[1
]}

Cazaux, JL ^{[1
]}

机构：

[1] IRCOM, F-87060 Limoges, France

来源：

33RD EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 27.88 three-pole 1.8% bandwidth silicon micro-machined filter with 50 dB rejection is presented. On a single resonator, a quality factor of 602 has been measured and the filter exhibits 2.9 dB of insertion losses. A 30.04 GHz two-pole silicon micro-machined filter with a simple planar integration is also proposed. The excitation is made from the top of the shielding substrate of a membrane supported micro-machined filter. Packaging and inter-connection are included in the design. The whole filter exhibits 1.8 dB of insertion losses. Such filter can be easily integrated by flip-chip technology.

引用

页码：813 / 815

页数：3

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