Schottky barrier modification and electrical characterization of low energy He-ion bombardment induced defects in n- and p-type GaAs

被引：5
|
作者：
Legodi, MJ [1 ]
Auret, FD [1 ]
Goodman, SA [1 ]
Malherbe, JB [1 ]
机构：
[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1999年 / 148卷 / 1-4期
关键词：
GaAs; He-ion; barrier height; DLTS;
D O I：
10.1016/S0168-583X(98)00859-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Schottky barrier height modification (BHM) resulting from 0.5 keV He-ion bombardment of n- and p-GaAs (doping similar to 10(16) cm(-3)) is investigated for doses between 5x10(10) and 5x10(14) cm(-2). Current-voltage measurements reveal a decrease (0.95-0.63 eV) and an increase (0.63-0.70) in barrier height, for n- and p-GaAs, respectively, for the dose above. Electronic properties of defects introduced are investigated through DLTS, current-voltage (I-V) and capacitance-voltage (C-V) measurements. Furthermore, we compare defects from 0.5 keV and MeV He-ion irradiation in both n-and p-GaAs. Annealing n-GaAs reveal a correlation between the BHM and the density of He-ion induced defects. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：441 / 445
页数：5
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