Modelling transport in single electron transistor

被引：2

作者：

Dinh Sy Hien ^{[1
]}

Huynh Lam Thu Thao ^{[1
]}

Le Hoang Minh ^{[1
]}

机构：

[1] HCM Univ Nat Sci, Ho Chi Minh City, Vietnam

来源：

APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08) | 2009年 / 187卷

关键词：

Coulomb blockable oscillation; single electron transistor; graphic user interface; I-V characteristics; SET MODEL;

D O I：

10.1088/1742-6596/187/1/012060

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We introduce a model of single electron transistor (SET). Simulation programme of SET is used as the exploratory tool in order to gain better understanding of process and device physics. This simulator includes a graphic user interface (GUI) in Matlab. The SET was simulated using GUI in Matlab to get current-voltage (I-V) characteristics. In addition, effects of device capacitance, bias, temperature on the I-V characteristics were obtained. In this work, we review the capabilities of the simulator of the SET. Typical simulations of the obtained I-V characteristics of the SET are presented.

引用

页数：5

共 3 条

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Uchida, K ;

Matsuzawa, K ;

Koga, J ;

Ohba, R ;

Takagi, S ;

Toriumi, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4B) :2321-2324

[3]

WASSHUBER C, 2002, COMPUTATIONAL ELECT

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