TSV Technology for Millimeter-Wave and Terahertz Design and Applications

被引：61

作者：

Hu, Sanming ^{[1
]}

Wang, Lei ^{[1
]}

Xiong, Yong-Zhong ^{[1
]}

Lim, Teck Guan ^{[1
]}

Zhang, Bo ^{[1
]}

Shi, Jinglin ^{[1
]}

Yuan, Xiaojun ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2011年 / 1卷 / 02期

关键词：

Antenna-circuit integration; millimeter-wave (mmW); substrate integrated waveguide (SIW); terahertz (THz); through silicon via (TSV); ATTENUATION; CHIP;

D O I：

10.1109/TCPMT.2010.2099731

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The through silicon via (TSV) technology provides a promising option to realize a compact millimeter-wave (mmW) and terahertz (THz) system with high performance. As the fundamental elements in this system, transmission lines (T-lines) and interconnects are very important and therefore studied in this paper. A TSV-based substrate integrated waveguide (SIW) is also characterized. The results show that, the T-lines and interconnects are viable at frequencies lower than similar to 150 GHz whereas SIW can operate relatively well up to 300 GHz. In addition, two mmW components, i.e., a hairpin filter and a patch antenna, are designed by the TSV technology. Results of all the above passive components indicate that the low-resistivity silicon is the main cause of the total loss. Afterwards, two novel TSV-based topologies are proposed to efficiently integrate an antenna with active circuits for the mmW and THz applications.

引用

页码：260 / 267

页数：8

共 21 条

[1]

De Maagt P., 2005, ENCY RF MICROWAVE EN, DOI [10.1002/0471654507.eme518, DOI 10.1002/0471654507.EME518]

[2] Integrated microstrip and rectangular waveguide in planar form [J].