Improved thermoelectric performance of flexible p-type SiGe films by B-doped Al-induced layer exchange

被引：10

作者：

Tsuji, M. ^{[1
]}

Imajo, T. ^{[1
]}

Saitoh, N. ^{[2
]}

Yoshizawa, N. ^{[2
]}

Suemasu, T. ^{[1
]}

Toko, K. ^{[1
,3
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058573, Japan

[2] AIST, TIA, Electron Microscope Facil, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan

[3] Japan Sci & Technol Agcy, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2020年 / 53卷 / 07期

关键词：

SiGe-on-insulator; Al-induced layer exchange; polycrystalline film; impurity doping; thermoelectrics; ALUMINUM-INDUCED CRYSTALLIZATION; THIN-FILMS; AMORPHOUS-SILICON; GERMANIUM; ORIENTATION; THICKNESS; FIGURE; MERIT;

D O I：

10.1088/1361-6463/ab5989

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Al-induced layer exchange is a useful method for the low-temperature synthesis of high-performance SiGe thermoelectric thin films. Because B has a high solid solubility in SiGe, we examined the self-organized doping of B to SiGe during layer exchange to further improve p-type thermoelectric properties. The hole concentration and the electrical conductivity were improved in the whole SiGe composition range when an appropriate amount (similar to 1%) of B to Al was added. A Si0.4Ge0.6 layer fabricated on a polyimide substrate at 350 degrees C exhibited a power factor of 240 mu W m(-1) K-2, which is best recorded as environmentally-friendly inorganic semiconductors formed on flexible substrates. The low-temperature Fermi-level-control technology for semiconductor films will exploit various flexible devices including thin-film thermoelectrics.

引用

页数：5

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